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参数资料
| 型号： | APT150GN60LDQ4 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 220 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 223K |
| 代理商： | APT150GN60LDQ4 |
050-7633
Rev
A
10-2008
4
3
1
2
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F/dt Adjust
30
μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Collector
Emitter
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Collector
TO-264 (L) Package Outline
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT150GN60LDQ4(G)
Cathode
/ Cathode
/ Anode
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相关代理商/技术参数 |
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|---|---|
| APT150GN60LDQ4G | 功能描述:IGBT 600V 220A 536W TO-264L RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT150GT120JR | 功能描述:IGBT 1200V 170A 830W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Thunderbolt IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT-15A | 制造商:OPTIFUSE 功能描述: |
| APT15D100B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT15D100BCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
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