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参数资料
| 型号： | APT15F50KF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 6.2 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 220K |
| 代理商： | APT15F50KF |
1
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1000
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10
100
1
10
100
1000
0
0. 1
0. 2
0. 3
0. 4
0. 5
0. 6
10-5
10-4
10-3
10-2
0.1
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10-5
10-4
10-3
10-2
0.1
1
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
t1 = Pulse Duration
DC line
100μs
I
DM
10ms
13μs
100μs
I
DM
100ms
10ms
13μs
Rds(on)
DC line
1ms
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 12, 15F50KFMaximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
T
J = 125°C
T
C = 75°C
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
e3 100% Sn Plated
TO-220 (K) Package Outline
Source
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Drain
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220 (KF) Package Outline
T
J = 125°C
T
C = 75°C
e3 100% Sn Plated
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, 15F50K Forward Safe Operating Area
Figure 10, 15F50KF Forward Safe Operating Area
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 11, 15F50K -Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I D
,DRAIN
CURRENT
(A)
APT15F50K_KF
050-8145
Rev
D
12-2009
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