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参数资料
| 型号： | APT15GF170BR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1700 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 1/3页 |
| 文件大小： | 45K |
| 代理商： | APT15GF170BR |
G
C
E
PRELIMINAR
Y
MIN
TYP
MAX
1700
-15
4.5
5.5
6.5
3.5
4.2
TBD
250
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.25mA)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
Gate Threshold Voltage
(VCE = VGE, IC = 350A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±25V, VCE = 0V)
Symbol
BVCES
RBVCES
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VEC
VGE
IC1
IC2
ICM1
ICM2
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1
@ TC = 25°C
Pulsed Collector Current 1
@ TC = 90°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT15GF170BR
1700
15
±20
25
15
50
32
23
310
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
052-6215
Rev
-
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT15GF170BR
1700V
25A
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Fast IGBT
TO-247
G
C
E
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相关代理商/技术参数 |
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|---|---|
| APT15GN120BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT15GN120BDQ1G | 功能描述:IGBT 1200V 45A 195W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GN120K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT15GN120KG | 功能描述:IGBT 1200V 45A 195W TO220 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GN120SDQ1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:High Speed PT IGBT |
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