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参数资料
| 型号： | APT15GF170BR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1700 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 2/3页 |
| 文件大小： | 45K |
| 代理商： | APT15GF170BR |
PRELIMINAR
Y
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS
APT15GF170BR
UNIT
°C/W
lbin
MIN
TYP
MAX
0.40
40
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.66VCES
IC = 0.8IC2
Resistive Switching (25
°C)
VGE = 15V
VCC = 0.66VCES
IC = 0.8IC2
RG = 5
Inductive Switching (150
°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = 0.8IC2
RG = 5
TJ = +150°C
Inductive Switching (25
°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = 0.8IC2
RG = 5
TJ = +25°C
VCE = 20V, IC = 15A
MIN
TYP
MAX
2000
160
65
TBD
120
35
TBD
UNIT
pF
nC
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C = 15A, VCC = 50V, RGE = 25, L = 200H, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6215
Rev
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