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参数资料
| 型号： | APT15GP60BDF1 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 129K |
| 代理商： | APT15GP60BDF1 |
050-7428
Rev
B
4-2003
APT15GP60BDF1
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
PEARSON 2878
CURRENT
TRANSFORMER
di
F/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F/dt - Current Rate of Decrease, Rate of Diode
Current Change Through Zero Crossing
From Positive to Negative.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
Slope = diM/dt
TRANSIENT THERMAL IMPEDANCE MODEL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.698
0.438
0.165
0.00173F
0.0395F
0.670F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
相关PDF资料 |
PDF描述 |
|---|---|
| APT15GP60BDQ1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1G | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BDQ1 | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BG | 56 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT15GP60BSC | 56 A, 600 V, N-CHANNEL IGBT, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT15GP60BDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT15GP60BDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A TO-247 制造商:Microsemi Corporation 功能描述:IGBT 600V 56A 250W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT15GP60BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT15GP60BDQ1G | 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT15GP60BG | 功能描述:IGBT 600V 56A 250W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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