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参数资料
| 型号： | APT15GT60KR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 190K |
| 代理商： | APT15GT60KR |
052-6202
Re
v
E
6-2008
APT15GT60KR(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.68
N/A
1.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 15A
T
J = 150°C, RG = 10, VGE =
15V, L = 100H,V
CE = 600V
InductiveSwitching(25°C)
V
CC = 400V
V
GE = 15V
I
C = 15A
R
G = 10
T
J = +25°C
InductiveSwitching(125°C)
V
CC = 400V
V
GE = 15V
I
C = 15A
R
G = 10
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
800
84
52
7.5
75
6
34
45
6
8
105
55
150
195
215
6
8
125
100
150
325
UNIT
pF
V
nC
A
ns
J
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
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相关代理商/技术参数 |
参数描述 |
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| APT15S20BCTG | 功能描述:DIODE SCHOTTKY 2X25A 200V TO-247 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| APT15S20K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20KCT | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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