参数资料
型号: APT15GT60KR
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 42 A, 600 V, N-CHANNEL IGBT, TO-220AB
封装: TO-220, 3 PIN
文件页数: 4/6页
文件大小: 190K
代理商: APT15GT60KR
052-6202
Re
v
E
6-2008
APT15GT60KR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent
FIGURE10,Turn-OffDelayTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent
FIGURE12,CurrentFallTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE14,TurnOffEnergyLossvsCollectorCurrent
R
G, GATE RESISTANCE (OHMS)
T
J,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance
FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
R
G = 10, L = 100
H, V
CE = 400V
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
10
8
6
4
2
0
30
25
20
15
10
5
0
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
160
140
120
100
80
60
40
20
0
250
200
150
100
50
0
600
500
400
300
200
100
0
1000
800
600
400
200
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
V
CE = 400V
V
GE = +15V
R
G = 10
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100
H, V
CE = 400V
V
CE = 400V
V
GE = +15V
R
G = 10
T
J = 125°C
T
J = 25°C
V
CE = 400V
V
GE = +15V
R
G = 10
T
J = 125°C
T
J = 25°C
E
on2,30A
E
off,30A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
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