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参数资料
| 型号： | APT15GT60KRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 42 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 382K |
| 代理商： | APT15GT60KRG |
052-6202
Rev
D
12-2005
APT15GT60KR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 10, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
10
8
6
4
2
0
30
25
20
15
10
5
0
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
160
140
120
100
80
60
40
20
0
250
200
150
100
50
0
600
500
400
300
200
100
0
1000
800
600
400
200
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 10
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
E
on2,30A
E
off,30A
VCE = 400V
VGE = +15V
TJ = 125°C
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
E
on2,7.5A
E
off,7.5A
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| APT15S20BCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20BCTG | 功能描述:DIODE SCHOTTKY 2X25A 200V TO-247 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| APT15S20K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20KCT | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT15S20KCTG | 功能描述:DIODE SCHOTTKY 2X25A 200V TO-220 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
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