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参数资料
| 型号： | APT200GN60JDQ4 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 283 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 524K |
| 代理商： | APT200GN60JDQ4 |
050-7611
Rev
B
3-2005
APT200GN60JDQ4
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefcient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplies gate drive design and minimizes losses
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
5s Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
175°C Rated
Applications: welding, inductive heating, solar inverters, motor drives, UPS, pass transistor
600V
APT200GN60JDQ4
C
E
G
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
E
C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 4mA)
Gate Threshold Voltage (V
CE = VGE, I C = 3.2mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 200A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 200A, Tj = 125°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
GINT
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
APT200GN60JDQ4
600
±20
283
158
600
600A @600V
682
-55 to 175
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
MIN
TYP
MAX
600
5
5.8
6.5
1.05
1.45
1.85
1.65
1.15
1.19
50
TBD
600
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT200GN60JDQ4G | 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT200GN60JG | 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT200GT60JR | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
| APT200GT60JRDL | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT200GT60JRDQ4 | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY COMBI - Rail/Tube |
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