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参数资料
| 型号： | APT18H60S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D2PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 262K |
| 代理商： | APT18H60S |
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
inlbf
Nm
Ratings
18
11
65
±30
495
9
Min
Typ
Max
335
0.37
0.15
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
TO-247
D3PAK
APT18H60B
APT18H60S
600V, 18A, 0.42 Max, trr ≤160ns
APT18H60B
APT18H60S
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8136
Rev
A
5-2007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT18M100B | 功能描述:MOSFET N-CH 1000V 18A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT18M100B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT18M100S | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT18M80B | 功能描述:MOSFET N-CH 800V 19A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT18M80B_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
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