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参数资料
| 型号： | APT18H60S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 600 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, D2PACK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 262K |
| 代理商： | APT18H60S |
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT18H60B_S
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 12.2mH, RG = 4.7, IAS = 9A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -3.43E-8/VDS^2 + 1.44E-8/VDS + 5.38E-11.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
C
A
V/ns
Min
Typ
Max
600
0.57
0.34
0.42
3
4
5
-10
250
1000
±100
Min
Typ
Max
17
3550
36
325
175
90
19
37
20
23
60
18
Min
Typ
Max
18
65
1.0
160
300
0.52
1.25
5.4
7.4
30
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 9A
V
GS = VDS, ID = 1mA
V
DS = 600V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
V
DS = 50V, ID = 9A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 400V
V
GS = 0 to 10V, ID = 9A,
V
DS = 300V
Resistive Switching
V
DD = 400V, ID = 9A
R
G = 4.7
6
, V
GG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 9A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
I
SD = 9A
3
T
J = 25°C
di
SD/dt = 100A/s
T
J = 125°C
V
DD = 100V
T
J = 25°C
T
J = 125°C
I
SD ≤ 9A, di/dt ≤1000A/s, VDD = 400V,
T
J = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
rrm
dv/dt
050-8136
Rev
A
5-2007
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