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参数资料
| 型号： | APT20N60SCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 190K |
| 代理商： | APT20N60SCF |
050-7235
Rev
A
5-2005
DYNAMIC CHARACTERISTICS
APT20N60BCF(G)_SCF(G)
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -20A)
Peak Diode Recovery dv/
dt
5
Reverse Recovery Time
(I
S = -20A,
di/
dt = 100A/s)
Reverse Recovery Charge
(I
S = -20A,
di/
dt = 100A/s)
Peak Recovery Current
(I
S = -20A,
di/
dt = 100A/s)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
20
60
1.2
40
180
260
1.4
2.5
15
18
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.60
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specications and information contained herein.
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 20A @ 25°C
RESISTIVE SWITCHING
V
GS = 15V
V
DD = 380V
I
D = 20A @ 25°C
R
G = 3.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 20A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 20A, RG = 5
4 Starting T
j = +25°C, L = 13.80mH, RG = 25, Peak IL = 10A
5 dv
/
dt numbers reect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID20A
di/
dt ≤ 700A/s VR ≤ 480V TJ ≤125°C
6 Eon includes diode reverse recovery. See gures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calcu-
lated as
PAV = EAR*f
MIN
TYP
MAX
2520
670
40
95
18
55
12
15
60
6.4
180
60
315
80
UNIT
pF
nC
ns
J
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