- 您现在的位置：买卖IC网 > PDF目录36709 > APT20N60SCF (MICROSEMI POWER PRODUCTS GROUP) 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT20N60SCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 190K |
| 代理商： | APT20N60SCF |
050-7235
Rev
A
5-2005
Typical Performance Curves
APT20N60BCF(G)_SCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
7V
5.5V
6V
6.5V
V
GS = 15 &10 V
8V
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS> ID(ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, RDS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
25
30
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
7.5V
T
J = -55°C
T
J = +25°C
T
J = +125°C
NORMALIZED TO
V
GS = 10V @ 13A
V
GS=10V
V
GS=20V
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
ID = 10A
VGS = 10V
0.322
0.276
0.00498F
0.0728F
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT20N60SCFG | 20 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT22M100JCU2 | 22 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT23H50S | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT23H50B | 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT25GF120JCU2 | 45 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT20SCD120B | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD120BHB | 制造商:Microsemi Corporation 功能描述: |
| APT20SCD120S | 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 1.2KV 68A 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE 制造商:Microsemi 功能描述:Diode Schottky 1.2KV 68A |
| APT20SCD65K | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE |
发布紧急采购，3分钟左右您将得到回复。