参数资料
型号: APT22M100JCU3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 22 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, ISOTOP-4
文件页数: 2/5页
文件大小: 109K
代理商: APT22M100JCU3
APT22M100JCU3
APT
22M
100JCU3
Rev
0
September
,2009
www.microsemi.com
2- 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS =1000V
VGS = 0V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 16A
400
480
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6800
Coss
Output Capacitance
700
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
92
pF
Qg
Total gate Charge
260
Qgs
Gate – Source Charge
46
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 16A
125
nC
Td(on)
Turn-on Delay Time
39
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 667V
ID = 16A
RG = 2.2Ω
33
ns
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
A
IF
DC Forward Current
Tc = 100°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/s
80
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Mosfet
0.27
RthJC
Junction to Case Thermal Resistance
SiC Diode
1.65
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
相关PDF资料
PDF描述
APT25GT120BRDL 54 A, 1200 V, N-CHANNEL IGBT, TO-247AD
APT26M100JCU2 26 A, 1000 V, 0.396 ohm, N-CHANNEL, Si, POWER, MOSFET
APT3010BNR 35 A, 300 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT30M85BNR 40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT30GF60JU2 58 A, 600 V, N-CHANNEL IGBT
相关代理商/技术参数
参数描述
APT23F60B 功能描述:MOSFET N-CH 600V 23A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
APT23F60S 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 23A D3PAK
APT24F50B 功能描述:MOSFET N-CH 500V 24A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
APT24F50B_09 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET
APT24F50S 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 500V 24A D3PAK