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参数资料
| 型号： | APT25GF120JCU2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 45 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 213K |
| 代理商： | APT25GF120JCU2 |
APT25GF120JCU2
APT
25GF120JCU2
–
Rev
0
Septem
ber
,2009
www.microsemi.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
500
A
Tj = 25°C
2.5
3.2
3.7
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 25A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
1650
Coes
Output Capacitance
250
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
110
pF
Qg
Total gate Charge
160
Qge
Gate – Emitter Charge
10
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 600V
IC =25A
70
nC
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
305
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
30
ns
Td(on)
Turn-on Delay Time
60
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
346
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
2.1
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
Tj = 125°C
1.5
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 900V
tp ≤ 10s ; Tj = 125°C
150
A
Chopper SiC diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
A
IF
DC Forward Current
Tc = 125°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/s
40
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF
相关PDF资料 |
PDF描述 |
|---|---|
| APT25GN120B2DQ2G | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B2DQ2 | 67 A, 1200 V, N-CHANNEL IGBT |
| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GN120BG | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GLQ120JCU2 | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT25GN120B | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT |
| APT25GN120B2DQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT |
| APT25GN120B2DQ2G | 功能描述:IGBT 1200V 67A 272W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GN120BG | 功能描述:IGBT 1200V 67A 272W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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