参数资料
型号: APT25GF120JCU2
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 45 A, 1200 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, ISOTOP-4
文件页数: 5/6页
文件大小: 213K
代理商: APT25GF120JCU2
APT25GF120JCU2
APT
25GF120JCU2
Rev
0
Septem
ber
,2009
www.microsemi.com
5- 6
VGE = 15V
50
55
60
65
70
75
5
15
25354555
ICE, Collector to Emitter Current (A)
td(
on),
Turn-On
Dela
y
Ti
me
(ns
)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 22
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
5
1525
3545
55
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td
(o
ff
),
T
u
rn
-O
ff
D
e
la
y
T
im
e
(n
s
)
VCE = 600V
RG = 22
VGE=15V
0
40
80
120
160
5
1525
3545
55
ICE, Collector to Emitter Current (A)
tr
,
R
ise
T
im
e
(n
s
)
Current Rise Time vs Collector Current
VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
5
1525354555
ICE, Collector to Emitter Current (A)
tf
,Fa
ll
Ti
me
(ns
)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 22
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
5
15
253545
55
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Turn-
On
E
n
e
rgy
Loss
(m
J
)
VCE = 600V
RG = 22
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
1525
35
4555
ICE, Collector to Emitter Current (A)
E
o
ff
,
Turn-of
fE
n
e
rgy
Loss
(m
J
)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 22
Eon, 25A
Eoff, 25A
1
1.5
2
2.5
3
0
1020
30405060
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
erg
y
L
o
s
se
s
(m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
10
20
30
40
50
60
0
400
800
1200
I C
,Col
lect
o
r
Current
(A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
相关PDF资料
PDF描述
APT25GN120B2DQ2G 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B2DQ2 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B2DQ2 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD
APT25GN120BG 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD
相关代理商/技术参数
参数描述
APT25GLQ120JCU2 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT25GN120B 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT
APT25GN120B2DQ2 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:IGBT
APT25GN120B2DQ2G 功能描述:IGBT 1200V 67A 272W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT25GN120BG 功能描述:IGBT 1200V 67A 272W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件