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参数资料
| 型号： | APT25GP90BDF1 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 72 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 210K |
| 代理商： | APT25GP90BDF1 |
050-7478
Rev
C
7-2004
APT25GP90BDF1
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE= 600V
RG = 5
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
10
20
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50
60
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60
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50
60
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20
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60
10
20
30
40
50
60
10
20
30
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50
60
0
10
20
30
40
50
0
25
50
75
100
125
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
TJ = 125°C
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
R
G = 5, L = 100
H, VCE = 600V
R
G = 5, L = 100
H, VCE = 600V
VCE =600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
18
16
14
12
10
8
6
4
2
0
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
100
80
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40
20
0
120
100
80
60
40
20
0
2500
2000
1500
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500
0
3000
2500
2000
1500
1000
500
0
VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
Eon2, 50A
Eoff, 50A
Eon2, 25A
Eoff, 25A
Eon2, 12.5A
Eoff, 12.5A
Eon2,50A
Eoff,25A
Eon2,25A
Eoff,50A
Eon2,12.5A
Eoff,12.5A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GP90BDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT25GP90BDQ1G | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GP90BG | 功能描述:IGBT 900V 72A 417W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GR120B | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT25GR120BD15 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 75A 521W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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