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参数资料
| 型号： | APT25GT120BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 54 A, 1200 V, N-CHANNEL IGBT, TO-247AA |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 代理商： | APT25GT120BR |
APT25GT120BR(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 800V
R
G
= 5
Ω
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,
TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,
TURN
OFF
ENERGY
LOSS
(J)
t f,
F
ALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
V
GE
= +15V
R
G
= 5
Ω
V
CE
= 800V
T
J
= 25°C
, or 125°C
R
G
= 5
Ω
L = 100H
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
200
180
160
140
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
0
2500
2000
1500
1000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 5
Ω
V
CE
= 800V
V
GE
= +15V
R
G
= 5
Ω
10
15
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
45
50
55
10
15
20
25
30
35
40
45
50
55
0
10
20
30
40
50
0
25
50
75
100
125
R
G
= 5
Ω, L = 100H, V
CE
= 800V
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
R
G
= 5
Ω, L = 100H, V
CE
= 800V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
052-6268
Rev
C
1
1-2007
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT25GT120BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT25GT120BRDLG | 功能描述:IGBT 1200V 54A 347W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GT120BRDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT25GT120BRDQ2G | 功能描述:IGBT 1200V 54A 347W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT25GT120BRG | 功能描述:IGBT 1200V 54A 347W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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