- 您现在的位置：买卖IC网 > PDF目录64116 > APT30GT60BR (MICROSEMI POWER PRODUCTS GROUP) 64 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT30GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 202K |
| 代理商： | APT30GT60BR |
052-6211
Re
v
E
6-2008
APT30GT60BR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,
THRESHOLD
V
OL
TA
GE
V
CE
,COLLECT
OR-T
O-EMITTER
V
OL
TA
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
I C
,COLLECT
OR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECT
OR
CURRENT(A)
V
CE
,COLLECT
OR-T
O-EMITTER
V
OL
TA
GE
(V)
V
GE
,GA
TE-T
O-EMITTER
V
OL
TA
GE
(V)
I C
,COLLECT
OR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
5
10
15
20
0
2
4
6
8
10
12
0
20
40
60
80 100 120 140 160
6
8
10
12
14
16
0
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
90
80
70
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE1,OutputCharacteristics(T
J =25°C)
FIGURE2,OutputCharacteristics(T
J =125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE3,TransferCharacteristics
FIGURE4,GateCharge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J,JunctionTemperature(°C)
FIGURE5,OnStateVoltagevsGate-to-EmitterVoltage
FIGURE6,OnStateVoltagevsJunctionTemperature
T
J,JUNCTIONTEMPERATURE(°C)
T
C,CASETEMPERATURE(°C)
FIGURE7,ThresholdVoltagevs.JunctionTemperature
FIGURE8,DCCollectorCurrentvsCaseTemperature
15 &13V
9V
8V
7V
10V
6V
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 60A
I
C = 30A
I
C = 15A
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C = 60A
I
C = 30A
I
C = 15A
T
J = 125°C
T
J = 25°C
T
J = -55°C
11V
V
CE = 480V
V
CE = 300V
V
CE = 120V
I
C = 30A
T
J = 25°C
V
GE = 15V
相关PDF资料 |
PDF描述 |
|---|---|
| APT30M36JFLL | 76 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40GP60JDF2 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40GU60JU3 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40M70LVR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50GF120HR | 62 A, 1200 V, N-CHANNEL IGBT, TO-258 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GT60BR_08 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs. |
| APT30GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
发布紧急采购，3分钟左右您将得到回复。