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参数资料
| 型号： | APT30GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 202K |
| 代理商： | APT30GT60BR |
052-6211
Re
v
E
6-2008
APT30GT60BR(G)
TYPICAL PERFORMANCE CURVES
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
θJC
,THERMAL
IMPED
ANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10-5
10-4
10-3
10-2
10-1
1.0
3,000
1,000
500
100
50
10
120
100
80
60
40
20
0
C
,CAP
A
CIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure17,Capacitancevs Collector-To-EmitterVoltage
Figure18,MinimimSwitchingSafeOperatingArea
0
10
20
30
40
50
0
100
200
300
400
500
600
700
FIGURE19b,TRANSIENTTHERMALIMPEDANCEMODEL
5
15
25
35
45
55
65
F
MAX
,OPERA
TING
FREQ
UENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 10
140
50
10
5
1
C
res
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
C
oes
C
ies
0.0838
0.207
0.209
0.00245
0.00548
0.165
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GT60BR_08 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs. |
| APT30GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
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