- 您现在的位置：买卖IC网 > PDF目录64116 > APT30GT60BR (MICROSEMI POWER PRODUCTS GROUP) 64 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT30GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 202K |
| 代理商： | APT30GT60BR |
052-6211
Re
v
E
6-2008
APT30GT60BR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE9,Turn-OnDelayTimevsCollectorCurrent
FIGURE10,Turn-OffDelayTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE11,CurrentRiseTimevsCollectorCurrent
FIGURE12,CurrentFallTimevsCollectorCurrent
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE13,Turn-OnEnergyLossvsCollectorCurrent
FIGURE14,TurnOffEnergyLossvsCollectorCurrent
R
G, GATE RESISTANCE (OHMS)
T
J,JUNCTIONTEMPERATURE(°C)
FIGURE15,SwitchingEnergyLossesvs.GateResistance
FIGURE16,SwitchingEnergyLossesvsJunctionTemperature
R
G = 10, L = 100
H, V
CE = 400V
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
1500
1000
500
0
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
2000
1500
1000
500
0
3000
2500
2000
1500
1000
500
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
V
CE = 400V
V
GE = +15V
R
G = 10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100
H, V
CE = 400V
V
CE = 400V
V
GE = +15V
R
G = 10
T
J = 125°C
T
J = 25°C
V
CE = 400V
V
GE = +15V
R
G = 10
T
J = 125°C
T
J = 25°C
E
on2,60A
E
off,60A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
E
on2,60A
E
off,60A
E
on2,30A
E
off,30A
E
on2,15A
E
off,15A
相关PDF资料 |
PDF描述 |
|---|---|
| APT30M36JFLL | 76 A, 300 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40GP60JDF2 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40GU60JU3 | 86 A, 600 V, N-CHANNEL IGBT |
| APT40M70LVR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50GF120HR | 62 A, 1200 V, N-CHANNEL IGBT, TO-258 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT30GT60BR_08 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT is a new generation of high voltage power IGBTs. |
| APT30GT60BRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT30GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT30GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT30GT60BRDQ2 | 制造商:APT 功能描述: |
发布紧急采购，3分钟左右您将得到回复。