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参数资料
| 型号： | APT32GU30BG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 86K |
| 代理商： | APT32GU30BG |
050-7463
Rev
-
10-2003
APT32GU30B
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 150V
IC = 15A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 300V
Inductive Switching (25°C)
VCC = 200V
VGE = 15V
IC = 15A
RG = 20
TJ = +25°C
Inductive Switching (125°C)
VCC = 200V
VGE = 15V
IC = 15A
RG = 20
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
1660
170
13
7.0
57
11
17
120
28
13
127
63
TBD
36
66
28
13
155
119
TBD
76
111
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
0.50
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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