- 您现在的位置：买卖IC网 > PDF目录36711 > APT32GU30BG (MICROSEMI POWER PRODUCTS GROUP) 55 A, 300 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT32GU30BG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 55 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 86K |
| 代理商： | APT32GU30BG |
050-7463
Rev
-
10-2003
APT32GU30B
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
VCE = 200V
RG= 20
L = 100 H
V
GE =
15V,TJ=125°C
VGE= 15V
V
GE =
15V,TJ=25°C
T
J
= 25°C, VGE = 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
= 25 or 125°C,VGE = 15V
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
TJ=125°C, VGE=15V
T
J
= 125°C, VGE = 10V or 15V
TJ = 25°C, VGE=15V
VCE = 200V
TJ = 25°C, TJ =125°C
RG= 20
L = 100 H
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
5
10
15
20
25
30
35
40
45
50
0
25
50
75
100
125
30
25
20
15
10
5
0
25
20
15
10
5
0
200
150
100
50
0
400
300
200
100
0
R
G
=20
, L = 100H, V
CE = 200V
160
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
300
250
200
150
100
50
0
300
250
200
150
100
50
0
VCE = 200V
L = 100 H
RG = 20
VCE = 200V
L = 100 H
RG = 20
VCE = 200V
VGE = +15V
T
J = 125°C
Eon27.5A
Eoff15A
Eon215A
Eon230A
Eoff 30A
Eoff 7.5A
VCE = 200V
VGE = +15V
RG = 20
Eon27.5A
Eoff15A
Eon215A
Eon230A
Eoff30A
Eoff7.5A
R
G
=20
, L = 100H, V
CE = 200V
相关PDF资料 |
PDF描述 |
|---|---|
| APT32GU30K | 55 A, 300 V, N-CHANNEL IGBT |
| APT32GU30KG | 55 A, 300 V, N-CHANNEL IGBT |
| APT32GU30K | 55 A, 300 V, N-CHANNEL IGBT |
| APT33GF120BR | 52 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT33GF120BR | 52 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT32GU30K | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT32M80J | 功能描述:MOSFET N-CH 800V 33A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 8™ 标准包装:10 系列:* |
| APT330 | 制造商:Pneumatic Components Ltd 功能描述:1/2 RATCHET |
| APT33GF120B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT33GF120B2RDQ2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
发布紧急采购，3分钟左右您将得到回复。