参数资料
型号: APT33GF120LRDQ2G
元件分类: IGBT 晶体管
英文描述: 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
封装: ROHS COMPLIANT, TO-264, 3 PIN
文件页数: 4/9页
文件大小: 454K
代理商: APT33GF120LRDQ2G
052-6280
Rev
A
11-2005
APT33GF120B2_LRDQ2(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 4.3
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 4.3, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 4.3
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
60
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3, L = 100H, VCE = 800V
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4,000
3,500
3,000
2,500
2,000
1,500
1,000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
VCE = 800V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 4.3
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,12.5A
E
off,12.5A
相关PDF资料
PDF描述
APT33GF120B2RDQ2 64 A, 1200 V, N-CHANNEL IGBT
APT33GF120B2RDQ2 64 A, 1200 V, N-CHANNEL IGBT
APT33GF120LRDQ2 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
APT33GF120B2RDQ2G 64 A, 1200 V, N-CHANNEL IGBT
APT33GF120LRDQ2 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA
相关代理商/技术参数
参数描述
APT33N90JCCU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT33N90JCCU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT33N90JCU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227
APT33N90JCU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227
APT-34AT 制造商:Atlas Sound 功能描述:HRN PG RN T72/30W BI-DIR GRY