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参数资料
| 型号： | APT33GF120LRDQ2G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 454K |
| 代理商： | APT33GF120LRDQ2G |
052-6280
Rev
A
11-2005
APT33GF120B2_LRDQ2(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400
600
800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
10 15 20 25 30 35
40 45 50
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 4.3
100
50
10
5
0
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
res
C
ies
C
oes
D = 0.9
0.7
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.125
0.225
0.0138
0.148
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
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| APT33GF120LRDQ2 | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT33GF120B2RDQ2G | 64 A, 1200 V, N-CHANNEL IGBT |
| APT33GF120LRDQ2 | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
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