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参数资料
| 型号： | APT33N90JCCU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 136K |
| 代理商： | APT33N90JCCU3 |
APT33N90JCCU3
APT
33N90JCCU3
–
Rev
0
Septem
ber
,2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 26A
100
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6.8
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.33
nF
Qg
Total gate Charge
270
Qgs
Gate – Source Charge
32
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 26A
115
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
25
ns
Eon
Turn-on Switching Energy
0.9
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.75
mJ
Eon
Turn-on Switching Energy
1.3
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.85
mJ
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
32
200
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
56
1000
A
IF
DC Forward Current
Tc = 100°C
10
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 10A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/s
40
nC
f = 1MHz, VR = 200V
96
C
Total Capacitance
f = 1MHz, VR = 400V
69
pF
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相关代理商/技术参数 |
参数描述 |
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| APT33N90JCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
| APT-34AT | 制造商:Atlas Sound 功能描述:HRN PG RN T72/30W BI-DIR GRY |
| APT34F100B2 | 功能描述:MOSFET N-CH 1000V 35A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT34F100B2_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
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