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参数资料
| 型号： | APT33N90JCCU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 3/5页 |
| 文件大小： | 136K |
| 代理商： | APT33N90JCCU3 |
APT33N90JCCU3
APT
33N90JCCU3
–
Rev
0
Septem
ber
,2009
www.microsemi.com
3 – 5
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
CoolMOS
0.43
RthJC
Junction to Case Thermal Resistance
SiC Diode
1.65
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG
Storage Temperature Range
-40
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Typical CoolMOS performance Curve
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
15
20
25
30
ID, Drain Current (A)
Fr
equ
e
ncy
(kHz
)
Operating Frequency vs Drain Current
VDS=600V
D=50%
RG=7.5
TJ=125°C
TC=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
5
10
15202530
3540
ID, Drain Current (A)
Eo
n
an
d
E
o
ff
(mJ)
VDS=600V
RG=7.5
TJ=125°C
L=100H
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
D
S
(on)
,
D
rai
n
t
o
S
o
ur
ce
ON
resi
stance
(N
o
rma
liz
e
d
)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
5
1015
20
2530
35
Gate Resistance (Ohms)
Swi
tchi
n
g
E
n
er
gy
(m
J)
VDS=600V
ID=26A
TJ=125°C
L=100H
Source
Gate
Drain
Anode
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT33N90JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
| APT33N90JCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
| APT-34AT | 制造商:Atlas Sound 功能描述:HRN PG RN T72/30W BI-DIR GRY |
| APT34F100B2 | 功能描述:MOSFET N-CH 1000V 35A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT34F100B2_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
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