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参数资料
| 型号： | APT33N90JCCU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 136K |
| 代理商： | APT33N90JCCU3 |
APT33N90JCCU3
APT
33N90JCCU3
–
Rev
0
Septem
ber
,2009
www.microsemi.com
5 – 5
Typical SiC Chopper diode performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
pe
da
nc
e
(
°C/W
)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
4
8
12
16
20
00.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
F
o
rwar
d
Cu
rr
ent
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
25
50
75
100
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Reverse
Cu
rr
en
t(
A)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1
10
100
1000
VR Reverse Voltage
C
,C
a
pacit
a
nce
(
p
F)
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT33N90JCU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
| APT33N90JCU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 900V 33A SOT227 |
| APT-34AT | 制造商:Atlas Sound 功能描述:HRN PG RN T72/30W BI-DIR GRY |
| APT34F100B2 | 功能描述:MOSFET N-CH 1000V 35A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT34F100B2_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel FREDFET |
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