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参数资料
| 型号： | APT47N60SCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 402K |
| 代理商： | APT47N60SCF |
050-7237
Rev
A
12-2005
FINAL DATA SHEET WITH MOS 7 FORMAT
600V 46A 0.083
APT47N60BCF
APT47N60SCF
APT47N60BCFG*
APT47N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 4 (V
GS = 10V, ID = 29A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.9mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 46A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
B
(VR)DS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT47N60B_SCF(G)
600
46
29
115
±30
417
1.67
-55 to 150
260
80
20
1
1800
Ultra Low RDS(ON)
Intrinsic Fast-Recovery Body Diode
Low Miller Capacitance
Extreme Low Reverse Recovery Charge
Ultra Low Gate Charge, Qg
Ideal For ZVS Applications
Avalanche Energy Rated
Popular TO-247 or Surface Mount D3 Package
Extreme dv/dt Rated
Super Junction FREDFET
MIN
TYP
MAX
600
0.083
6
5000
±100
3
4
5
APT Website - http://www.advancedpower.com
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
TO-247
D3PAK
G
D
S
(S)
(B)
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| APT47N60SCFG | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT47N65BC3 | 47 A, 650 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT47N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT47N65BC3 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT47N65BC3G | 功能描述:MOSFET N-CH 650V 47A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT47N65SCS3G | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 47A TO-247 |
| APT48M80B2 | 功能描述:MOSFET N-CH 800V 48A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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