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参数资料
| 型号： | APT47N60SCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 402K |
| 代理商： | APT47N60SCF |
050-7237
Rev
A
12-2005
Typical Performance Curves
APT47N60BCF_SCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Figure 19, Turn-off Switching Waveforms and Denitions
Figure 18, Turn-on Switching Waveforms and Denitions
Drain Current
Drain Voltage
Gate Voltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
APT30DQ60
ID
VDS
D.U.T.
VDD
G
Figure 20, Inductive Switching Test Circuit
T
J125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
Drain Voltage
Gate Voltage
Drain Current
Switching Energy
TO-247 Package Outline
D
3PAK Package Outline
e3
e1 SAC: Tin, Silver, Copper
100% Sn
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
D
ra
in
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APT47N60SCFG | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT47N60BCF | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT47N65BC3 | 47 A, 650 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5010B2VFR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5010B2VR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT47N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT47N65BC3 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT47N65BC3G | 功能描述:MOSFET N-CH 650V 47A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT47N65SCS3G | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 47A TO-247 |
| APT48M80B2 | 功能描述:MOSFET N-CH 800V 48A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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