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参数资料
| 型号： | APT47N60SCF |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 402K |
| 代理商： | APT47N60SCF |
050-7237
Rev
A
12-2005
APT47N60BCF_SCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
T
C =+25°C
T
J =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
C
rss
C
iss
C
oss
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
115
50
10
5
1
16
14
12
10
8
6
4
2
0
404
104
103
102
101
200
100
10
1
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100S
1mS
10mS
SWITCHING
ENERGY
(mJ)
t d(on)
and
t d(off)
(ns)
SWITCHING
ENERGY
(mJ)
t rand
t f
(ns)
E
on
E
off
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
T
J =+150°C
T
J =+25°C
ID = 46A
t
d(on)
t
d(off)
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
Eon includes
diode reverse recovery.
VDD = 400V
RG = 4.3
TJ = 125°C
L = 100H
t
r
t
f
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
0
5
10 15 20 25 30 35 40 45 50
1
10
100
600
0
100
200
300
400
500
0
50 100 150 200 250 300 350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
DS=300V
V
DS=120V
V
DS=480V
300
250
200
150
100
50
0
2500
2000
1500
1000
500
0
E
on
E
off
90
80
70
60
50
40
30
20
10
0
3500
3000
2500
2000
1500
1000
500
0
VDD = 400V
ID = 46A
TJ = 125°C
L = 100H
Eon includes
diode reverse recovery.
相关PDF资料 |
PDF描述 |
|---|---|
| APT47N60SCFG | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT47N60BCF | 46 A, 600 V, 0.083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT47N65BC3 | 47 A, 650 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5010B2VFR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5010B2VR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT47N60SCFG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction FREDFET |
| APT47N65BC3 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT47N65BC3G | 功能描述:MOSFET N-CH 650V 47A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT47N65SCS3G | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 47A TO-247 |
| APT48M80B2 | 功能描述:MOSFET N-CH 800V 48A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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