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参数资料
| 型号： | APT5020SLC |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 121K |
| 代理商： | APT5020SLC |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Current 2 (V
DS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (V
GS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1mA)
050-5901
Rev
B
9-2000
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
26
0.20
25
250
±100
35
APT5020
500
26
104
±30
±40
300
2.4
-55 to 150
300
26
30
1300
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
POWER MOS VITM
TO-247
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss and
C
rss.
Lower gate charge coupled with Power MOS VITM optimized gate
layout, delivers exceptionally fast switching speeds.
Identical Specifications: TO-247 or Surface Mount D3PAK Package
Lower Gate Charge & Capacitance
Easier To Drive
100% Avalanche Tested
Faster switching
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
D3PAK
BLC
SLC
APT5020BLC
APT5020SLC
500V 26A 0.200
相关PDF资料 |
PDF描述 |
|---|---|
| APT5020BN-GULLWING | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BN-BUTT | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-GULLWING | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-BUTT | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5027BNR | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5020SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-263AB |
| APT5020SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020SVFRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5020SVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK |
| APT5020SVRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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