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参数资料
| 型号： | APT5020SLC |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 121K |
| 代理商： | APT5020SLC |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500
.01
.1
1
10
50
0
20
40
60
80
100 120 140 160
0
0.4
0.8
1.2
1.6
2.0
APT5020 BLC - SLC
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
10,000
5,000
1,000
500
100
50
10
200
100
50
10
5
1
050-5901
Rev
B
9-2000
10S
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
1mS
100S
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
I
D = ID [Cont.]
TO-247 Package Outline
D
3PAK Package Outline
OPERATION HERE
LIMITED BY RDS (ON)
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
相关PDF资料 |
PDF描述 |
|---|---|
| APT5020BN-GULLWING | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BN-BUTT | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-GULLWING | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-BUTT | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5027BNR | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5020SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-263AB |
| APT5020SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020SVFRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5020SVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK |
| APT5020SVRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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