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参数资料
| 型号： | APT5020SLC |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 121K |
| 代理商： | APT5020SLC |
050-5901
Rev
B
9-2000
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
V
GS = 15V
V
DD = 0.5 VDSS
I
D = ID[Cont.] @ 25°C
R
G = 1.6
MIN
TYP
MAX
2560
3100
515
730
98
150
71
110
19
23
40
60
10
20
918
23
35
510
UNIT
pF
nC
ns
APT5020 BLC - SLC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID[Cont.])
Reverse Recovery Time (I
S = -ID[Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID[Cont.], dlS/dt = 100A/s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
26
104
1.3
460
8.1
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L =3.85mH, RG = 25, Peak IL = 26A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
相关PDF资料 |
PDF描述 |
|---|---|
| APT5020BN-GULLWING | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5020BN-BUTT | 28 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-GULLWING | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5022BN-BUTT | 27 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5027BNR | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5020SN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-263AB |
| APT5020SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5020SVFRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5020SVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) D3PAK |
| APT5020SVRG | 功能描述:MOSFET N-CH 500V 26A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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