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参数资料
| 型号： | APT50GF120LR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 524K |
| 代理商： | APT50GF120LR |
052-6216
Rev
E
5-2006
APT50GF120B2_LR(G)
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 50A
T
J = 150°C, RG = 1.0,
7 V
GE =
15V, L = 100H,V
CE = 1200V
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 1.0
7
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 1.0
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (With Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (With Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
3460
385
225
9.5
340
30
205
150
25
43
260
70
3600
4675
2640
25
43
300
95
3750
6400
3400
UNIT
pF
V
nC
A
ns
J
ns
J
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.16
N/A
6.1
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Mircosemi Reserves the right to change, without notice, the specications and information contained herein.
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF120LRG | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GF120B2R | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF120B2RG | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF60HR | 55 A, 600 V, N-CHANNEL IGBT, TO-258 |
| APT50GN120B2G | 134 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
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