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参数资料
| 型号： | APT50GF120LR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 524K |
| 代理商： | APT50GF120LR |
052-6216
Rev
E
5-2006
APT50GF120B2_LR(G)
APT40DQ120
e1 SAC: Tin, Silver, Copper
T-MAX (B2) Package Outline
Dimensions in Millimeters and (Inches)
Collector
Emitter
Gate
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
e1 SAC: Tin, Silver, Copper
TO-264(L) Package Outline
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Figure 22, Turn-on Switching Waveforms and Denitions
T
J = 125°C
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
Collector Current
Collector Voltage
Gate Voltage
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
Collector Voltage
Collector Current
Gate Voltage
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF120LRG | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GF120B2R | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF120B2RG | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF60HR | 55 A, 600 V, N-CHANNEL IGBT, TO-258 |
| APT50GN120B2G | 134 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
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