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参数资料
| 型号： | APT50GF120LR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 524K |
| 代理商： | APT50GF120LR |
052-6216
Rev
E
5-2006
APT50GF120B2_LR(G)
TYPICAL PERFORMANCE CURVES
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
50
60
70
80
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
D = 50 %
VCE = 800V
RG = 1.0
60
10
5
1
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
D = 0.9
0.7
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
TC = 75°C
TC = 100°C
6,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400
600
800 1000 1200 1400
C
res
C
ies
C
oes
0.0663
0.0941
0.00740
0.252
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GF120LRG | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GF120B2R | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF120B2RG | 135 A, 1200 V, N-CHANNEL IGBT |
| APT50GF60HR | 55 A, 600 V, N-CHANNEL IGBT, TO-258 |
| APT50GN120B2G | 134 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
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