参数资料
型号: APT50GF60B2RD
厂商: Advanced Power Technology Ltd.
英文描述: The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述: ⑩的快速IGBT是一种高压IGBT的新一代。
文件页数: 4/7页
文件大小: 112K
代理商: APT50GF60B2RD
0
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
USA
405 S.W. Columbia Street
F-33700 Merignac - France
Phone: (33) 5 5792 1515
FAX: (33) 556 4797 61
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
APT50GF60B2RD/LRD
PRELIMINARY
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 μs, T
j
= 25 °C
0
1
2
3
V
5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter: t
p
= 80 μs, T
j
= 125 °C
0
1
2
3
V
5
V
CE
0
10
20
30
40
50
60
70
80
A
100
I
C
17V
15V
13V
11V
9V
7V
Short circuit safe operating area
I
Csc
= f (V
CE
) , T
j
= 150°C
parameter: V
GE
= ± 15 V, t
sc
10 μs, L < 50 nH
0
100
200
300
400
500
600
V
V
CE
800
0
2
4
6
10
I
Csc
/I
C(90°C)
I
/I
Reverse biased safe operating area
I
Cpuls
= f(V
CE
) , T
j
= 150°C
parameter: V
GE
= 15 V
0
100
200
300
400
500
600
V
V
CE
800
0.0
0.5
1.0
1.5
2.5
I
/I
C
I
Cpulse
/I
C1
相关PDF资料
PDF描述
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60HR The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60LRD Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
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相关代理商/技术参数
参数描述
APT50GF60BR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60HR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60JCU2 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs
APT50GF60JU2 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APT50GF60JU3 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B