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参数资料
| 型号： | APT50GF60B2RD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 5/7页 |
| 文件大小： | 112K |
| 代理商： | APT50GF60B2RD |
0
APT50GF60B2RD/LRD
PRELMNARY
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 85
°
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
°
C, 8.3ms)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage
I
F
= 120A
I
F
= 60A, T
J
= 150
°
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
1.8
1.75
1.5
APT50GF60B2RD/LRD
600
60
100
600
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
°
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MIN
TYP
MAX
55
70
70
90
160
160
10
17
20
30
350
900
6
6
800
500
UNIT
ns
Amps
nC
Volts
A/
μ
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
μ
s, V
R
= 30V,
T
J
= 25
°
C
Reverse Recovery Time
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 350V
Forward Recovery Time
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 350V
Reverse Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 350V
Recovery Charge
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 350V
Forward Recovery Voltage
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 350V
Rate of Fall of Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 350V
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
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| APT50GF60HR | The Fast IGBT is a new generation of high voltage power IGBTs. |
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相关代理商/技术参数 |
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|---|---|
| APT50GF60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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