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参数资料
| 型号： | APT50GS60SR(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 605K |
| 代理商： | APT50GS60SR(G) |
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
mJ)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
20
40
60
80
100
120
0
10
20
30
40
50
0
25
50
75
100
125
20
18
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
10
8
6
4
2
0
300
250
200
150
100
50
0
80
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
6
5
4
3
2
1
0
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.7
L = 100H
VCE = 400V
VGE = +15V
RG = 4.7
R
G = 4.7, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, TJ =125°C
R
G = 4.7
L = 100H
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 400V
VGE = +15V
RG = 4.7
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 4.7
E
on2,100A
E
off,100A
E
off,50A
E
on2,50A
E
on2,25A
E
off,25A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
VCE = 400V
VGE = +15V
TJ = 125°C
R
G = 4.7, L = 100H, VCE = 400V
TYPICAL PERFORMANCE CURVES
APT50GS60B_SR(G)
052-6301
Rev
A
8-2007
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相关代理商/技术参数 |
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|---|---|
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120B2RDQ2G | 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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