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参数资料
| 型号： | APT50GS60SR(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, D3PAK-3 |
| 文件页数： | 5/7页 |
| 文件大小： | 605K |
| 代理商： | APT50GS60SR(G) |
0.0731
0.226
0.00606
0.260
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Figure 20, Transient Thermal Impedance Model
I
C, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
F
MAX
,OPERATING
FREQUENCY
(kHz)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
Figure 18, Maximum Forward Safe Operating Area
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
1
10
100
800
1
10
100
800
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
200
100
10
1
0.1
Scaling for Different Case & Junction
Temperatures:
I
C = IC(TC = 25°C)
*(T
J - TC)/125
T
J = 150°C
T
C = 25°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
T
J = 125°C
T
C = 75°C
1ms
100ms
VCE(on)
DC line
100s
I
CM
10ms
13s
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 4.7
75°C
100°C
0.3
0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
10-5
10-4
10-3
10-2
10-1
1.0
0
10 20 30 40 50
60 70 80
90
160
140
120
100
80
60
40
20
0
APT50GS60B_SR(G)
052-6301
Rev
A
8-2007
TYPICAL PERFORMANCE CURVES
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120B2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GT120B2R | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
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| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120B2RDQ2G | 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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