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参数资料
| 型号： | APT50GT120LRDQ2G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 434K |
| 代理商： | APT50GT120LRDQ2G |
052-6271
Rev
A
8-2005
APT50GT120LRDQ2(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,THRESHOLD
VOLTAGE
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
1
2
3
4
5
6
7
0
5
10
15
20
0
2
4
6
8
10
12
14
0
50
100 150 200
250 300
350
8
10
12
14
16
25
50
75
100
125
150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
150
125
100
75
50
25
0
16
14
12
10
8
6
4
2
0
7
6
5
4
3
2
1
0
160
140
120
100
80
60
40
20
0
T
J = 125°C
T
J = 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
VGE = 15V
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
I
C = 25A
I
C = 50A
I
C = 100A
I
C = 25A
I
C = 50A
I
C = 100A
13V
11V
10V
9V
12V
8V
7V
15V
T
J = -55°C
IC = 50A
TJ = 25°C
V
CE = 960V
V
CE = 600V
V
CE = 240V
LeadTemperature
Limited
LeadTemperature
Limited
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相关代理商/技术参数 |
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|---|---|
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT50GT60BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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