参数资料
型号: APT50GT120LRDQ2G
元件分类: IGBT 晶体管
英文描述: 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA
封装: TO-264, 3 PIN
文件页数: 4/9页
文件大小: 434K
代理商: APT50GT120LRDQ2G
052-6271
Rev
A
8-2005
APT50GT120LRDQ2(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 1
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 1
L = 100H
35
30
25
20
15
10
5
0
160
140
120
100
80
60
40
20
0
25,000
20,000
15,000
10,000
5,000
0
60,000
50,000
40,000
30,000
20,000
10,000
0
300
250
200
150
100
50
0
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
25,000
20,000
15,000
10,000
5,000
0
V
GE = 15V
VCE = 800V
VGE = +15V
RG = 1
VCE = 800V
VGE = +15V
RG = 1
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
20
30
40
50
60
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 1, L = 100H, VCE = 800V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 1, L = 100H, VCE = 800V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
VCE = 800V
VGE = +15V
TJ = 125°C
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
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