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参数资料
| 型号： | APT50GT120LRDQ2G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 8/9页 |
| 文件大小： | 434K |
| 代理商： | APT50GT120LRDQ2G |
052-6271
Rev
A
8-2005
APT50GT120LRDQ2(G)
TJ = 125°C
VR = 800V
20A
40A
80A
600
500
400
300
200
100
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
TJ = 175°C
80
70
60
50
40
30
20
10
0
C
J,
JUNCTION
CAPACITANCE
K
f,DYNAMIC
PARAMETE
RS
(pF)
(Normalized
to
1000A/
s)
I F(AV)
(A)
T
J, JUNCTION TEMPERATURE (°C)
Case Temperature (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
V
F, ANODE-TO-CATHODE VOLTAGE (V)
-di
F /dt, CURRENT RATE OF CHANGE(A/s)
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F /dt, CURRENT RATE OF CHANGE (A/s)
-di
F /dt, CURRENT RATE OF CHANGE (A/s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 28. Reverse Recovery Current vs. Current Rate of Change
Q
rr,
REVERSE
RECOVERY
CHARGE
I F
,FORWARD
CURRENT
(nC)
(A)
I RRM
,REVERSE
RECOVERY
CURRENT
t rr
,REVERSE
RECOVERY
TIME
(A)
(ns)
T
J = 175°C
T
J = -55°C
T
J = 25°C
T
J = 125°C
0
1
2
3
4
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
TJ = 125°C
VR = 800V
80A
20A
40A
120
100
80
60
40
20
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
TJ = 125°C
VR = 800V
80A
40A
20A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
150
100
50
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
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相关代理商/技术参数 |
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|---|---|
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
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