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参数资料
| 型号： | APT50GT60S |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封装： | D3PAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 409K |
| 代理商： | APT50GT60S |
052-6273
Rev
B
11-2005
APT50GT60B_SR(G)
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
C
ol
le
ct
or
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
C
ol
le
ct
or
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
e1 SAC: Tin, Silver, Copper
e3 SAC: Tin, Silver, Copper
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT60SG | 110 A, 600 V, N-CHANNEL IGBT |
| APT50GT60BRDL | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BRG | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SRG | 110 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT60SR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50M38JFLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M38JLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
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