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参数资料
| 型号： | APT50M50L2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 97K |
| 代理商： | APT50M50L2FLL |
Typical Performance Curves
050-7115
Rev
B
2-2004
APT50M50L2FLL
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
7.5V
5V
5.5V
6.5V
6V
7V
15 &10V
NORMALIZED TO
V
GS
= 10V @ I
D
= 44.5A
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
I
D
= 44.5A
V
GS
= 10V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100 120 140 160 180
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
180
160
140
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
200
180
160
140
120
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.0622
0.0778
0.0191F
0.209F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M50L2FLL | 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M50L2FLLG | 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M60JVFR | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M50L2FLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M50L2FLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
| APT50M50L2LL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
| APT50M50L2LL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
| APT50M50L2LLG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX |
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