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参数资料
| 型号： | APT50M50L2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 97K |
| 代理商： | APT50M50L2FLLG |
2SC4926
Rev.3.00 Aug 10, 2005 page 5 of 7
.2
.4
.6
1.0 1.5 2
4
35
1
1.5
2
3
4
5
10
–10
–5
–4
–3
–2
–1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
10
Condition: V
= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I
= 5 mA)
(I
= 20 mA)
C
S11 Parameter vs. Frequency
90
°
60
°
120
°
30
°
0
°
–30
°
–60
°
–90
°
–120
°
–150
°
180
°
150
°
Scale: 5 / div.
Condition: V
= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I
= 5 mA)
(I
= 20 mA)
C
S21 Parameter vs. Frequency
90
°
60
°
30
°
0
°
–30
°
–60
°
–90
°
–120
°
–150
°
180
°
150
°
120
°
Scale: 0.04 / div.
Condition: V
= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I
= 5 mA)
(I
= 20 mA)
C
S12 Parameter vs. Frequency
.2
.4
.6 .8 1.0 1.5 2
3 4 5
–10
–5
–4
–3
–2
–1.5
–1
–.8
–.6
–.4
–.2
0
.2
.4
.6
.8
1
1.5
2
3
4
5
10
Condition: V
= 5 V , Zo = 50
200 to 2000 MHz (200 MHz step)
CE
(I
= 5 mA)
(I
= 20 mA)
C
10
S22 Parameter vs. Frequency
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| APT50M60L2VFRG | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M50L2LL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
| APT50M50L2LL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
| APT50M50L2LLG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:Trans MOSFET N-CH 500V 89A 3-Pin(3+Tab) TO-264 MAX |
| APT50M50PVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 76A I(D) |
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