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参数资料
| 型号： | APT50M75JLLU3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 494K |
| 代理商： | APT50M75JLLU3 |
APT50M75JLLU3
A
PT
50M
75J
L
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
2 – 8
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25.5A
75
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5590
Coss
Output Capacitance
1180
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
85
pF
Qg
Total gate Charge
123
Qgs
Gate – Source Charge
33
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A
65
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
21
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 250V
ID = 51A
RG = 0.6
W
5
ns
Eon
Turn-on Switching Energy
u
755
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5
726
J
Eon
Turn-on Switching Energy
u
1241
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 330V
ID = 51A, RG = 5
846
J
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M75LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT50M75LFLLG | 功能描述:MOSFET N-CH 500V 57A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M75LLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT50M75LLLG | 功能描述:MOSFET N-CH 500V 57A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M80 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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