参数资料
型号: APT5510JFLL
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 5/5页
文件大小: 94K
代理商: APT5510JFLL
050-7191
Rev
A
3-2003
APT5510JFLL
Typical Performance Curves
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
D.U.T.
APT30DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
10 %
t
d(on)
90%
5 %
t
r
10 %
T
J
= 125 C
Drain Current
Gate Voltage
Drain Voltage
Switching Energy
90%
t
d(off)
T
J
= 125 C
Gate Voltage
Drain Voltage
Drain Current
10%
0
t
f
90%
Switching Energy
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APT5510JFLL 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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