参数资料
型号: APT58M50JCU2
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 58 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, ISOTOP-4
文件页数: 1/5页
文件大小: 110K
代理商: APT58M50JCU2
APT58M50JCU2
APT
58M
50JCU2
Rev
0
Septem
b
er
,2009
www.microsemi.com
1- 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G
S
D
K
ISOTOP
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
58
ID
Continuous Drain Current
Tc = 80°C
43
IDM
Pulsed Drain current
270
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
65
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
543
W
IAR
Avalanche current (repetitive and non repetitive)
42
A
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS 8 MOSFET
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
MOSFET + SiC chopper diode
Power module
K
D
G
S
VDSS = 500V
RDSon = 65mΩ Max @ Tj = 25°C
ID = 58A @ Tc = 25°C
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